Tag Archives: Electric Vehicle

Electric Electronics

KDPOF Equips Electric Cars with Optical Connectivity

Presentation of Automotive Gigabit Ethernet POF at Automotive Ethernet Congress

KDPOF Equips Electric Cars with Optical Connectivity

KDPOF delivers optical connectivity for powertrains in electric and hybrid vehicles.

KDPOF – leading supplier for automotive gigabit connectivity over POF (Plastic Optical Fiber) – provide their innovative Automotive Gigabit Ethernet POF (GEPOF) for electric and autonomous driving to perfectly solve the electrical challenges and interferences of new powertrain architectures. „We are happy to announce that several car makers and Tier-1 suppliers have adopted our optical technology for electrical powertrains and autonomous vehicles,“ stated Carlos Pardo, CEO and Co-Founder of KDPOF. „Electromagnetic noise is a major issue in any electrical power train, both in full electrical or hybrid architectures. It affects the operation of the electronic circuits within the car and countermeasures have to be taken at early stages of the design.“ Consequently, due to the presence of hazardous high voltage (above 25 Vac or 60 Vdc), galvanic isolation is necessary between the domains of a battery management system and also between the primary and secondary systems of both ac-dc and dc-dc. Optical connections with POF provide the optimal means to achieve galvanic isolation while realizing data communications between the domains at the same time. KDPOF will present their GEPOF technology at Automotive Ethernet Congress on January 30 and 31, 2018 in Munich, Germany.

Optical Connectivity for Electric and Hybrid Vehicles

The control of all the subsystems involved in the electrical powertrain requires a communication bus that transports the control, actuation and sensor signals among the different components in all domains. The communication bus has to be immune to the electromagnetic noise and, at the same time, comply with the mechanical, temperature, and weight constraints of the overall vehicle. 1000BASE-RH, the Ethernet specification for a Gigabit capable, POF-based communication protocol, is ideal for the new architectures, as it provides a natural galvanic isolation between communicating modules and a radiation free harness. Moreover, it can operate at 100 Mbps for most current needs while also supporting future needs at 1 Gbps.

KDPOF recently announced the sampling of the KD1053, the first automotive grade Gigabit Ethernet POF transceiver. The KD1053 complies with the new IEEE standard amendment Std 802.3bv™ for Gigabit Ethernet over POF. It fully meets the requirements of carmakers by providing high connectivity with a flexible digital host interface, low latency, low jitter, and low linking time.

About KDPOF

Fabless semiconductor supplier KDPOF provides innovative gigabit and long-reach communications over Plastic Optical Fiber (POF). Making gigabit communication over POF a reality, KDPOF technology supplies 1 Gbps POF links for automotive, industrial, and home networks. Founded in 2010 in Madrid, Spain, KDPOF offer their technology as either ASSP or IP (Intellectual Property) to be integrated in SoCs (System-on-Chips). The adaptive and efficient system works with a wide range of optoelectronics and low-cost large core optical fibers, thus delivering carmakers low risks, costs and short time-to-market.

Company-Contact
KDPOF
Óscar Ciordia
Ronda de Poniente 14 2ºA
28760 Tres Cantos
Phone: +34 91 8043387
E-Mail: ma@ahlendorf-communication.com
Url: http://www.kdpof.com

Press
ahlendorf communication
Mandy Ahlendorf
Schiffbauerweg 5F
82319 Starnberg
Phone: +4981519739098
E-Mail: ma@ahlendorf-communication.com
Url: http://www.ahlendorf-communication.com

Electric Electronics

Fujitsu to Start Production of GaN Power Devices for High-Efficiency Power Supply Units in 2013

Fujitsu to Start Production of GaN Power Devices for High-Efficiency Power Supply Units in 2013

Fujitsu Semiconductor will start production of GaN power devices for high-efficiency power supply units for servers, which achieve high output power of 2.5kW.

GaN technology achieves high output power of 2.5kW in power supply units for servers

Langen, Germany, November 22, 2012 – Fujitsu Semiconductor Europe (FSEU) today announced that it has achieved high output power of 2.5kW in server power-supply units equipped with gallium-nitride (GaN) power devices built on a silicon substrate. Using GaN technology in power supply applications enhances power efficiency and helps reduce the carbon footprint. Compared with conventional silicon-based power devices, GaN-based power devices feature lower on-resistance and the ability to perform high-frequency operations. Since these characteristics improve the conversion efficiency of power supply units and make them more compact, this technology is ideal not just for servers but for a broad range of applications including solar inverters, battery chargers or electric vehicles.

Fujitsu Semiconductor plans to commercialise GaN power devices on a silicon substrate, increasing the diameters of the silicon wafers and enabling low-cost production. The company began work on GaN technology in 2009 and began providing specific power-supply-related partners with sample GaN power devices in 2011. Since then, Fujitsu has worked on optimizing the devices for use in power supply units. Fujitsu will start volume production of the GaN power devices by the second half of 2013.

Collaboration with Fujitsu Laboratories yields impressive results
Fujitsu Semiconductor collaborated closely with Fujitsu Laboratories on several key technical initiatives to achieve this technological progress, including the development of the process technology for growing high-quality GaN crystals on a silicon substrate. The collaboration also delivered device technologies, such as optimizing the design of electrodes to control the rise of on-resistance during switching, and devising a circuit layout for power supply units that can support high-speed switching of GaN-based devices.

The results enable Fujitsu Semiconductor to achieve conversion efficiency that exceeds the performance of conventional silicon devices by using a GaN power device in a power-factor-correction circuit. For example, Fujitsu Semiconductor created a prototype server power-supply unit incorporating a power-factor-correction circuit based on GaN technology that achieved output power of 2.5kW. This impressive performance makes GaN power devices suitable for use in high-voltage, large-current applications.

Fujitsu Semiconductor has established a mass-production line for 6-inch wafers at its Aizu-Wakamatsu plant and will begin full-scale production of GaN power devices in the second half of 2013. By offering GaN power devices optimised for customer applications and technology support for circuit designs, Fujitsu Semiconductor will enable the development of low-loss, compact power supply units for a wide range of uses.

Über Fujitsu Semiconductor Europe (FSEU)

Fujitsu Semiconductor Europe ist einer der wichtigsten Zulieferer von „Right-Sized“ und fortschrittlichen Halbleiterlösungen. Das Unternehmen mit Hauptsitz in Langen bei Frankfurt am Main bedient die Märkte Automotive, Industrial, Communications und Home Entertainment. Die „Right-Sized“-Strategie von FSEU ist darauf ausgerichtet, Kunden maßgeschneiderte Lösungen und eine höchstmögliche Wertschöpfungstiefe bieten zu können. Ingenieure der europäischen Design-Zentren sowie Forschungs- und Entwicklungseinrichtungen von Fujitsu, die sich analoger und Mixed-Signal-Technologie, Advanced Packaging, Mikrocontrollern, Grafikcontrollern, Multimedia ICs, ASICs und Embedded Software widmen, arbeiten eng mit Marketing- und Vertriebsteams in der EMEA-Region zusammen, um den Anforderungen der Kunden an deren Systementwicklung gerecht zu werden. FSEU-Teams stehen Kunden in Langen, München, Maidenhead bei London, Paris, Mailand, Budapest, Istanbul und Linz, Österreich mit technischem und anwendungsorientiertem Support zur Seite.

Unternehmenswebsite: http://emea.fujitsu.com/semiconductor
Newsletter: http://emea.fujitsu.com/newsletter
Twitter: http://emea.fujitsu.com/twitter

Kontakt:
Fujitsu Semiconductor Europe GmbH
Rainer Reitz
Pittlerstr. 47
63225 Langen
06103-6900
rainer.reitz@de.fujitsu.com
http://emea.fujitsu.com/semiconductor

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